Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
30V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Pin Count
3
Drain Source Current Ids
0.3 to 1.5 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
€ 20,21
€ 0,202 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 20,21
€ 0,202 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
100
| количество | Единична цена | Per Ролка |
|---|---|---|
| 100 - 225 | € 0,202 | € 5,05 |
| 250 - 475 | € 0,176 | € 4,39 |
| 500 - 975 | € 0,154 | € 3,84 |
| 1000+ | € 0,14 | € 3,49 |
Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
30V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Pin Count
3
Drain Source Current Ids
0.3 to 1.5 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


