Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Length
2.92mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 5,57
€ 0,223 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 5,57
€ 0,223 Each (In a Pack of 25) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
25
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 25 - 75 | € 0,223 | € 5,57 |
| 100 - 225 | € 0,192 | € 4,80 |
| 250 - 475 | € 0,166 | € 4,15 |
| 500 - 975 | € 0,145 | € 3,64 |
| 1000+ | € 0,133 | € 3,32 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Length
2.92mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


