Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Length
2.92mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 6,95
€ 0,278 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 6,95
€ 0,278 Each (In a Pack of 25) (ex VAT)
Стандарт
25
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
25 - 75 | € 0,278 | € 6,95 |
100 - 225 | € 0,24 | € 6,00 |
250 - 475 | € 0,208 | € 5,20 |
500 - 975 | € 0,183 | € 4,58 |
1000+ | € 0,166 | € 4,16 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Length
2.92mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.