Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 263,99
€ 0,088 Each (On a Reel of 3000) (ex VAT)
3000
€ 263,99
€ 0,088 Each (On a Reel of 3000) (ex VAT)
3000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.