Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-2 to -25mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
250 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,358
Each (Supplied as a Tape) (ex VAT)
50
€ 0,358
Each (Supplied as a Tape) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Лента |
---|---|---|
50 - 50 | € 0,358 | € 17,89 |
100 - 950 | € 0,212 | € 10,58 |
1000 - 2950 | € 0,207 | € 10,35 |
3000+ | € 0,201 | € 10,06 |
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-2 to -25mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
250 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.