Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Drain Source Resistance Rds
100Ω
Pin Count
3
Drain Source Current Ids
2 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
€ 5,26
€ 0,21 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 5,26
€ 0,21 Each (In a Pack of 25) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
25
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 25 - 75 | € 0,21 | € 5,26 |
| 100 - 225 | € 0,181 | € 4,53 |
| 250 - 475 | € 0,157 | € 3,93 |
| 500 - 975 | € 0,139 | € 3,46 |
| 1000+ | € 0,126 | € 3,15 |
Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Drain Source Resistance Rds
100Ω
Pin Count
3
Drain Source Current Ids
2 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


