Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
15V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
30Ω
Drain Source Current Ids
20 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
1.04mm
Length
2.9mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
€ 125,22
€ 0,25 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
500
€ 125,22
€ 0,25 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
500
| количество | Единична цена | Per Ролка |
|---|---|---|
| 500 - 950 | € 0,25 | € 12,52 |
| 1000+ | € 0,217 | € 10,85 |
Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
15V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
30Ω
Drain Source Current Ids
20 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
1.04mm
Length
2.9mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


