Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,254
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
500
€ 0,254
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
500
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
500 - 950 | € 0,254 | € 12,68 |
1000+ | € 0,22 | € 10,99 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.