Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
Switch-N-Channel
Channel Type
Type N
Maximum Drain Source Voltage Vds
20V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Pin Count
3
Drain Source Current Ids
10 to 40 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-40 V
Maximum Operating Temperature
150°C
Width
1.3 mm
Length
2.9mm
Height
1.04mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
€ 13,33
€ 0,267 Each (In a Pack of 50) (ex VAT)
Стандарт
50
€ 13,33
€ 0,267 Each (In a Pack of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
50
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 50 - 450 | € 0,267 | € 13,33 |
| 500 - 950 | € 0,23 | € 11,48 |
| 1000+ | € 0,199 | € 9,92 |
Технически документи
Спецификации
Brand
onsemiProduct Type
JFET
Sub Type
Switch-N-Channel
Channel Type
Type N
Maximum Drain Source Voltage Vds
20V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Pin Count
3
Drain Source Current Ids
10 to 40 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-40 V
Maximum Operating Temperature
150°C
Width
1.3 mm
Length
2.9mm
Height
1.04mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


