N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 onsemi MMBF170LT1G

Номер на артикул на RS: 545-0321Марка: onsemi№ по каталога на производителя: MMBF170LT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

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€ 0,241

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 onsemi MMBF170LT1G
Изберете тип опаковка

€ 0,241

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 onsemi MMBF170LT1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 90€ 0,241€ 2,41
100 - 190€ 0,23€ 2,30
200 - 740€ 0,192€ 1,92
750 - 1490€ 0,181€ 1,81
1500+€ 0,167€ 1,67

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more