N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 onsemi MGSF2N02ELT1G

Номер на артикул на RS: 792-5675PМарка: onsemi№ по каталога на производителя: MGSF2N02ELT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.6 nC @ 4 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Страна на произход

China

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N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

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€ 0,343

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 onsemi MGSF2N02ELT1G
Изберете тип опаковка

€ 0,343

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 onsemi MGSF2N02ELT1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
20 - 80€ 0,343€ 6,85
100 - 180€ 0,175€ 3,51
200 - 980€ 0,152€ 3,04
1000 - 1980€ 0,131€ 2,62
2000+€ 0,124€ 2,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.6 nC @ 4 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Страна на произход

China

Детайли за продукта

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more