Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-150 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-150 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Страна на произход
China
Детайли за продукта
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Производствен пакет (Тръба)
5
P.O.A.
Производствен пакет (Тръба)
5
Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-150 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-150 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 9.2mm
Страна на произход
China
Детайли за продукта
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.