onsemi J112 N-Channel JFET, Idss min. 5mA, 3-Pin TO-92
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,308
Each (In a Pack of 50) (ex VAT)
Стандарт
50
€ 0,308
Each (In a Pack of 50) (ex VAT)
Стандарт
50
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 50 - 450 | € 0,308 | € 15,38 |
| 500+ | € 0,265 | € 13,23 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products