Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Height
4.58mm
Width
3.86mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 182,98
€ 0,183 Each (In a Bag of 1000) (ex VAT)
1000
€ 182,98
€ 0,183 Each (In a Bag of 1000) (ex VAT)
Информацията за складовите наличности временно не е налична.
1000
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Чувал |
|---|---|---|
| 1000 - 2000 | € 0,183 | € 182,98 |
| 3000+ | € 0,181 | € 180,70 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Height
4.58mm
Width
3.86mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


