onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface
Технически документи
Спецификации
Brand
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Детайли за продукта
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
€ 94,14
€ 1,883 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 94,14
€ 1,883 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
50
| количество | Единична цена | Per Ролка |
|---|---|---|
| 50 - 95 | € 1,883 | € 9,41 |
| 100 - 495 | € 1,633 | € 8,17 |
| 500 - 995 | € 1,435 | € 7,17 |
| 1000+ | € 1,308 | € 6,54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Детайли за продукта
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products