N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 onsemi HUF75344G3

Номер на артикул на RS: 807-6670Марка: onsemi№ по каталога на производителя: HUF75344G3
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

55 V

Package Type

TO-247

Series

UltraFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

285 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

15.87mm

Typical Gate Charge @ Vgs

175 nC @ 20 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Height

20.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 3,087

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 onsemi HUF75344G3
Изберете тип опаковка

€ 3,087

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 onsemi HUF75344G3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
2 - 8€ 3,087€ 6,18
10 - 98€ 2,626€ 5,25
100 - 248€ 2,088€ 4,18
250 - 498€ 2,035€ 4,07
500+€ 1,86€ 3,72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

55 V

Package Type

TO-247

Series

UltraFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

285 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

15.87mm

Typical Gate Charge @ Vgs

175 nC @ 20 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Height

20.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more