P-Channel MOSFET, 36 A, 150 V, 3-Pin TO-3PN onsemi FQA36P15

Номер на артикул на RS: 671-4938Марка: onsemi№ по каталога на производителя: FQA36P15
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

150 V

Series

QFET

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

294 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.8mm

Width

5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

18.9mm

Детайли за продукта

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

P-Channel MOSFET, 36 A, 150 V, 3-Pin TO-3PN onsemi FQA36P15
Изберете тип опаковка

P.O.A.

P-Channel MOSFET, 36 A, 150 V, 3-Pin TO-3PN onsemi FQA36P15
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

150 V

Series

QFET

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

294 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.8mm

Width

5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

18.9mm

Детайли за продукта

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more