Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
15, 20
Transistor Configuration
Single
Maximum Collector Base Voltage
1100 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
15 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Детайли за продукта
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Запитване за цена
Each (In a Tube of 50) (ex VAT)
50
Запитване за цена
Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
15, 20
Transistor Configuration
Single
Maximum Collector Base Voltage
1100 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
15 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Детайли за продукта
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


