Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
30 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
12 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 6.22 x 2.39mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 97,74
€ 0,489 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
200
€ 97,74
€ 0,489 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
200
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 200 - 480 | € 0,489 | € 9,77 |
| 500 - 980 | € 0,424 | € 8,48 |
| 1000+ | € 0,373 | € 7,46 |
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
30 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
12 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 6.22 x 2.39mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


