Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-17 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
-250 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.6 x 4.8 x 19.9mm
Детайли за продукта
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Запитване за цена
Each (In a Pack of 5) (ex VAT)
Стандарт
5
Запитване за цена
Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-17 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
-250 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.6 x 4.8 x 19.9mm
Детайли за продукта
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


