onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Технически документи
Спецификации
Brand
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Maximum Operating Temperature
+175 °C
Energy Rating
160mJ
Minimum Operating Temperature
-55 °C
Gate Capacitance
5100pF
Страна на произход
China
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 5,491
Each (In a Tube of 450) (ex VAT)
450
€ 5,491
Each (In a Tube of 450) (ex VAT)
450
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Maximum Operating Temperature
+175 °C
Energy Rating
160mJ
Minimum Operating Temperature
-55 °C
Gate Capacitance
5100pF
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products