onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

Номер на артикул на RS: 145-4338Марка: onsemi№ по каталога на производителя: FGAF40N60UFTU
brand-logo
Преглед на всички в IGBTs

Технически документи

Спецификации

Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

100 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Страна на произход

China

Детайли за продукта

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 2,397

Each (In a Tube of 30) (ex VAT)

onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

€ 2,397

Each (In a Tube of 30) (ex VAT)

onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
30 - 30€ 2,397€ 71,92
60 - 120€ 2,206€ 66,17
150 - 270€ 2,074€ 62,21
300+€ 1,909€ 57,26

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

100 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Страна на произход

China

Детайли за продукта

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more