N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C

Номер на артикул на RS: 181-1860Марка: onsemi№ по каталога на производителя: FDP8D5N10C
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 1,541

Each (In a Tube of 800) (ex VAT)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C

€ 1,541

Each (In a Tube of 800) (ex VAT)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
800 - 800€ 1,541€ 1 232,88
1600 - 2400€ 1,34€ 1 072,23
3200 - 4800€ 1,292€ 1 033,94
5600+€ 1,243€ 994,71

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more