N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0

Номер на артикул на RS: 178-4238Марка: onsemi№ по каталога на производителя: FCD360N65S3R0
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0

2500

Предлагат се на бройка по 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

P.O.A.

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK onsemi FCD360N65S3R0
Информацията за складовите наличности временно не е налична.

2500

Предлагат се на бройка по 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more