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N-Channel MOSFET, 36 A, 600 V, 3-Pin D2PAK onsemi FCB36N60NTM

Номер на артикул на RS: 864-4803Марка: onsemi№ по каталога на производителя: FCB36N60NTM
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Series

SupreMOS

Minimum Operating Temperature

-55 °C

Height

4.83mm

Детайли за продукта

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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No hidden fees!

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  • View and contribute website content and forums
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N-Channel MOSFET, 36 A, 600 V, 3-Pin D2PAK onsemi FCB36N60NTM

P.O.A.

N-Channel MOSFET, 36 A, 600 V, 3-Pin D2PAK onsemi FCB36N60NTM
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Series

SupreMOS

Minimum Operating Temperature

-55 °C

Height

4.83mm

Детайли за продукта

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от