Dual N-Channel MOSFET, 25 A, 24 V Depletion, 10-Pin WLCSP ON Semiconductor EFC4K110NUZTDG
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
24 V
Package Type
WLCSP
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
3.23mm
Typical Gate Charge @ Vgs
49 nC @ 4.5 V nC
Width
2.13mm
Number of Elements per Chip
2
Height
0.17mm
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5000
P.O.A.
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
24 V
Package Type
WLCSP
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
3.23mm
Typical Gate Charge @ Vgs
49 nC @ 4.5 V nC
Width
2.13mm
Number of Elements per Chip
2
Height
0.17mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products