onsemi P-Channel MOSFET, 9 A, 30 V, 8-Pin ECH ECH8310-TL-H

Номер на артикул на RS: 162-9318Марка: onsemi№ по каталога на производителя: ECH8310-TL-H
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

2.3mm

Length

2.9mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.9mm

Страна на произход

China

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 1 037,89

€ 0,346 Each (On a Reel of 3000) (ex VAT)

onsemi P-Channel MOSFET, 9 A, 30 V, 8-Pin ECH ECH8310-TL-H

€ 1 037,89

€ 0,346 Each (On a Reel of 3000) (ex VAT)

onsemi P-Channel MOSFET, 9 A, 30 V, 8-Pin ECH ECH8310-TL-H
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

2.3mm

Length

2.9mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.9mm

Страна на произход

China

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more