P-Channel MOSFET, 3 A, 12 V, 3-Pin CPH3 onsemi CPH3348-TL-W

Номер на артикул на RS: 920-9773Марка: onsemi№ по каталога на производителя: CPH3348-TL-W
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

CPH3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

215 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

5.6 nC @ 4.5 V

Width

1.6mm

Transistor Material

Si

Forward Diode Voltage

1.2V

Height

0.9mm

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Запитване за цена

Each (In a Pack of 25) (ex VAT)

P-Channel MOSFET, 3 A, 12 V, 3-Pin CPH3 onsemi CPH3348-TL-W
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 25) (ex VAT)

P-Channel MOSFET, 3 A, 12 V, 3-Pin CPH3 onsemi CPH3348-TL-W

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

CPH3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

215 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

5.6 nC @ 4.5 V

Width

1.6mm

Transistor Material

Si

Forward Diode Voltage

1.2V

Height

0.9mm

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more