Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
CPH
Mounting Type
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Страна на произход
China
Детайли за продукта
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
CPH
Mounting Type
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Страна на произход
China
Детайли за продукта
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.