N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 onsemi 2V7002KT1G

Номер на артикул на RS: 163-2026Марка: onsemi№ по каталога на производителя: 2V7002KT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,044

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 onsemi 2V7002KT1G

€ 0,044

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 onsemi 2V7002KT1G
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
3000 - 6000€ 0,044€ 133,32
9000+€ 0,028€ 84,20

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more