Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 17mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 8,76
€ 0,35 Each (Supplied as a Tape) (ex VAT)
Стандарт
25
€ 8,76
€ 0,35 Each (Supplied as a Tape) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
25
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Лента |
|---|---|---|
| 25 - 75 | € 0,35 | € 8,76 |
| 100 - 225 | € 0,302 | € 7,56 |
| 250 - 475 | € 0,261 | € 6,53 |
| 500 - 975 | € 0,23 | € 5,76 |
| 1000+ | € 0,21 | € 5,24 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 17mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


