N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002LT1G

Номер на артикул на RS: 103-2941Марка: onsemi№ по каталога на производителя: 2N7002LT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.94mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 0,042

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002LT1G

€ 0,042

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002LT1G
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
3000 - 3000€ 0,042€ 126,31
6000 - 9000€ 0,041€ 122,80
12000 - 27000€ 0,04€ 119,29
30000 - 57000€ 0,039€ 115,78
60000+€ 0,037€ 112,27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.94mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more