Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.92mm
Number of Elements per Chip
1
Height
0.93mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 312,16
€ 0,104 Each (On a Reel of 3000) (ex VAT)
3000
€ 312,16
€ 0,104 Each (On a Reel of 3000) (ex VAT)
3000
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
3000 - 6000 | € 0,104 | € 312,16 |
9000 - 12000 | € 0,102 | € 304,98 |
15000 - 27000 | € 0,098 | € 294,22 |
30000 - 57000 | € 0,096 | € 287,04 |
60000+ | € 0,093 | € 279,86 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.92mm
Number of Elements per Chip
1
Height
0.93mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.