onsemi NXH80T120L2Q0P2TGOS IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount

Номер на артикул на RS: 195-8776Марка: ON Semiconductor№ по каталога на производителя: NXH80T120L2Q0P2TG
Преглед на всички в IGBTs

Технически документи

Спецификации

Brand

ON Semiconductor

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

158 W

Package Type

Q0PACK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

20

Dimensions

70.1 x 32.7 x 12.33mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

onsemi NXH80T120L2Q0P2TGOS IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount

24

Предлагат се на бройка по 24
24P.O.A.
48P.O.A.
72P.O.A.
96P.O.A.
120P.O.A.
144P.O.A.
168P.O.A.
192P.O.A.
216P.O.A.
240P.O.A.
264P.O.A.
288P.O.A.
312P.O.A.
336P.O.A.
360P.O.A.

P.O.A.

onsemi NXH80T120L2Q0P2TGOS IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount
Информацията за складовите наличности временно не е налична.

24

Предлагат се на бройка по 24
24P.O.A.
48P.O.A.
72P.O.A.
96P.O.A.
120P.O.A.
144P.O.A.
168P.O.A.
192P.O.A.
216P.O.A.
240P.O.A.
264P.O.A.
288P.O.A.
312P.O.A.
336P.O.A.
360P.O.A.

Технически документи

Спецификации

Brand

ON Semiconductor

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

158 W

Package Type

Q0PACK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

20

Dimensions

70.1 x 32.7 x 12.33mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C