onsemi NGTB40N120IHLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Технически документи
Спецификации
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
260 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1
P.O.A.
1
Технически документи
Спецификации
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
260 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C