ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220

Номер на артикул на RS: 864-8950Марка: ON Semiconductor№ по каталога на производителя: FJP2160DTU
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Технически документи

Спецификации

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Детайли за продукта

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

P.O.A.

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Изберете тип опаковка

P.O.A.

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Детайли за продукта

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more