N-Channel MOSFET, 289 A, 30 V, 8-Pin PQFN onsemi FDMS7650DC

Номер на артикул на RS: 760-5911Марка: ON Semiconductor№ по каталога на производителя: FDMS7650DC
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

289 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

990 μΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4.85mm

Transistor Material

Si

Typical Gate Charge @ Vgs

147 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.04mm

Series

PowerTrench

Детайли за продукта

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

N-Channel MOSFET, 289 A, 30 V, 8-Pin PQFN onsemi FDMS7650DC
Изберете тип опаковка

P.O.A.

N-Channel MOSFET, 289 A, 30 V, 8-Pin PQFN onsemi FDMS7650DC
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

289 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

990 μΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4.85mm

Transistor Material

Si

Typical Gate Charge @ Vgs

147 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.04mm

Series

PowerTrench

Детайли за продукта

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more