Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03

Номер на артикул на RS: 146-4094Марка: ON Semiconductor№ по каталога на производителя: FDMS1D4N03S
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Технически документи

Спецификации

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

5.85mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Детайли за продукта

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
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Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 10.

Производство -

Предлагат се на бройка по 10.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

10

Предлагат се на бройка по 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 10.

Производство -

Предлагат се на бройка по 10.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

10

Предлагат се на бройка по 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

5.85mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Детайли за продукта

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more