N-Channel MOSFET, 9 A, 100 V, 8-Pin Power 33 onsemi FDMC86160

Номер на артикул на RS: 774-1206Марка: ON Semiconductor№ по каталога на производителя: FDMC86160
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

100 V

Package Type

Power 33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.3mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

3.3mm

Transistor Material

Si

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

0.75mm

Детайли за продукта

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

N-Channel MOSFET, 9 A, 100 V, 8-Pin Power 33 onsemi FDMC86160
Изберете тип опаковка

P.O.A.

N-Channel MOSFET, 9 A, 100 V, 8-Pin Power 33 onsemi FDMC86160
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

100 V

Package Type

Power 33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.3mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

3.3mm

Transistor Material

Si

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

0.75mm

Детайли за продукта

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more