Dual P-Channel MOSFET, 5.5 A, 30 V, 8-Pin ECH onsemi ECH8667-TL-H
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Height
0.9mm
Страна на произход
China
Детайли за продукта
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
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Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Height
0.9mm
Страна на произход
China
Детайли за продукта
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products