N-Channel MOSFET, 150 mA, 30 V, 3-Pin CP onsemi 3LN01C-TB-E
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Package Type
CP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Height
1.1mm
Страна на произход
China
Детайли за продукта
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Package Type
CP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Height
1.1mm
Страна на произход
China
Детайли за продукта
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products