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NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23

Номер на артикул на RS: 626-3308Марка: NXP№ по каталога на производителя: PMBFJ308,215
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Технически документи

Спецификации

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 60mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Страна на произход

China

Детайли за продукта

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,119

Each (In a Pack of 10) (ex VAT)

NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
Изберете тип опаковка

€ 0,119

Each (In a Pack of 10) (ex VAT)

NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 40€ 0,119€ 1,19
50 - 90€ 0,108€ 1,08
100 - 240€ 0,101€ 1,01
250 - 490€ 0,097€ 0,97
500+€ 0,083€ 0,84

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 60mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Страна на произход

China

Детайли за продукта

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more