NXP BFG520W/X,115 NPN RF Bipolar Transistor, 70 mA, 15 V, 4-Pin SOT-343

Номер на артикул на RS: 626-2591Марка: NXP№ по каталога на производителя: BFG520W/X,115
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Технически документи

Спецификации

Brand

NXP

Transistor Type

NPN

Maximum DC Collector Current

70 mA

Maximum Collector Emitter Voltage

15 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2.5 V

Maximum Operating Frequency

9000 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1 x 2.2 x 1.35mm

Maximum Operating Temperature

+150 °C

Страна на произход

Hong Kong

Детайли за продукта

RF Bipolar Transistors, NXP

Bipolar Transistors, NXP

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

NXP BFG520W/X,115 NPN RF Bipolar Transistor, 70 mA, 15 V, 4-Pin SOT-343

10

Предлагат се на бройка по 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

NXP BFG520W/X,115 NPN RF Bipolar Transistor, 70 mA, 15 V, 4-Pin SOT-343
Информацията за складовите наличности временно не е налична.

10

Предлагат се на бройка по 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

NXP

Transistor Type

NPN

Maximum DC Collector Current

70 mA

Maximum Collector Emitter Voltage

15 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2.5 V

Maximum Operating Frequency

9000 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1 x 2.2 x 1.35mm

Maximum Operating Temperature

+150 °C

Страна на произход

Hong Kong

Детайли за продукта

RF Bipolar Transistors, NXP

Bipolar Transistors, NXP

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more