Технически документи
Спецификации
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Страна на произход
China
Детайли за продукта
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,261
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 0,261
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
100 - 240 | € 0,261 | € 2,61 |
250 - 990 | € 0,229 | € 2,30 |
1000+ | € 0,185 | € 1,85 |
Технически документи
Спецификации
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Страна на произход
China
Детайли за продукта
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.