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N-Channel MOSFET, 89 A, 60 V, 4-Pin LFPAK, SOT-669 Nexperia PSMN7R0-60YS,115

Номер на артикул на RS: 798-3028Марка: Nexperia№ по каталога на производителя: PSMN7R0-60YS,115
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

4.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 1,567

Each (Supplied as a Tape) (ex VAT)

N-Channel MOSFET, 89 A, 60 V, 4-Pin LFPAK, SOT-669 Nexperia PSMN7R0-60YS,115
Изберете тип опаковка

€ 1,567

Each (Supplied as a Tape) (ex VAT)

N-Channel MOSFET, 89 A, 60 V, 4-Pin LFPAK, SOT-669 Nexperia PSMN7R0-60YS,115
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

4.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more