Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5mm
Width
4.1mm
Transistor Material
Si
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
Запитване за цена
Each (In a Pack of 5) (ex VAT)
Стандарт
5
Запитване за цена
Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5mm
Width
4.1mm
Transistor Material
Si
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта


