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Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220AB PSMN3R0-60PS,127

Номер на артикул на RS: 798-2946PМарка: Nexperia№ по каталога на производителя: PSMN3R0-60PS,127
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

306 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.3mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+175 °C

Height

16mm

Minimum Operating Temperature

-55 °C

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

P.O.A.

Each (Supplied in a Tube) (ex VAT)

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220AB PSMN3R0-60PS,127
Изберете тип опаковка

P.O.A.

Each (Supplied in a Tube) (ex VAT)

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220AB PSMN3R0-60PS,127
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

306 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.3mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+175 °C

Height

16mm

Minimum Operating Temperature

-55 °C

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more