Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Number of Elements per Chip
1
Length
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
€ 7,04
€ 1,408 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 7,04
€ 1,408 Each (In a Pack of 5) (ex VAT)
Стандарт
5
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Number of Elements per Chip
1
Length
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта