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Nexperia N-Channel MOSFET, 100 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN1R2-30YLC,115

Номер на артикул на RS: 798-2906Марка: Nexperia№ по каталога на производителя: PSMN1R2-30YLC
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

215 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

78 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.1mm

Number of Elements per Chip

1

Length

5mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

€ 7,04

€ 1,408 Each (In a Pack of 5) (ex VAT)

Nexperia N-Channel MOSFET, 100 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN1R2-30YLC,115
Изберете тип опаковка

€ 7,04

€ 1,408 Each (In a Pack of 5) (ex VAT)

Nexperia N-Channel MOSFET, 100 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN1R2-30YLC,115
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

215 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

78 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.1mm

Number of Elements per Chip

1

Length

5mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more