Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
2
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
2
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта


