Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
680 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-883B
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
0.76 nC @ 4.5 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
0.36mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Запитване за цена
Each (Supplied as a Tape) (ex VAT)
Стандарт
25
Запитване за цена
Each (Supplied as a Tape) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
25
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
680 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-883B
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
0.76 nC @ 4.5 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
0.36mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта


