Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта


